MBS KOREA

Silicon Wafer

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Silicon Wafer
실리콘 웨이퍼
2" 4" 6" 8" 12"

Wafer of Prime, Test, Spacer Wafer
Sapphre Wafer
사파이어
Glass, Quartz Wafer
유리, 석영

8inch [200mm]

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Pattern Wafer 8inch

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Pattern Wafer 8inch

item(3)

Bare Wafer 8inch

item(4)

Epi Wafer 8inch

item(5)

Oxide Wafer 8inch

item(6)

Bump Wafer 8inch

12inch [300mm]

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Pattern Wafer 12inch

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Pattern Wafer 12inch

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Bare Wafer 12inch

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Oxide Wafer 12inch

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Glass Wafer 12inch

Wafer Specifiction

SILICON Bare Wafer (notch / Flat)
Diameter	3"	4"	5"	6"	8"	12"
Thickness	Standard Special / Customer's Demand Thickness
Size	75 ± 0.2mm	100 ± 0.2mm	125 ± 0.2mm	150 ± 0.2mm	200 ± 0.2mm	300 ± 0.2mm
Resistivity	0.001 〜 100,000 Ohm Cm
Growth Method	CZ, FZ
Grade	TEST WAFER / DUMMY WAFER
Type	P/N
Dopant	P / Boron , N / Phosphorous / Antimony / Arsenic
Orientation	100/110/111
Surface	One Side Polished, Double Side Polished,
Back side	Etched / Bare
Edge Profile	Rounded Or As Required

SILICON Bare Wafer (notch / Flat)
Service	TYPE	Thickness	Delivery
Thermal Oxidation (4” 〜12”)	Dry/Wet	300 〜 20,000	10 Days
Nitride	Normal Low stress	1,500 〜 3,000	10 Days
Sputtering (4”~12”)	Al/Si, Cu/Ti, W/Ti	Customized	10 Days
Back-End (Si)	Polishing	Bare / Oxidation	10 Days
	Grinding Lapping	200um 이하	10 Days
		400um 이하	10 Days
		400um 초과	10 Days
	Grinding Lapping polishing	200um 이하	10 Days
		400um 이하	10 Days
		400um 초과	10 Days
Dicing	Pattern	Customized	10 Days
Cleaning	Chemical	BOE/SC1	10 Days

Wafer Polishing Pross

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