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Silicon Wafer
2" 4" 6" 8" 12"
Wafer of Prime, Test, Spacer Wafer
Sapphre Wafer
Glass, Quartz Wafer
8inch [200mm]
12inch [300mm]
SILICON Bare Wafer (notch / Flat) | ||||||
Diameter | 3" | 4" | 5" | 6" | 8" | 12" |
Thickness | Standard Special / Customer's Demand Thickness | |||||
Size | 75 ± 0.2mm |
100 ± 0.2mm |
125 ± 0.2mm |
150 ± 0.2mm |
200 ± 0.2mm |
300 ± 0.2mm |
Resistivity | 0.001 〜 100,000 Ohm Cm | |||||
Growth Method |
CZ, FZ | |||||
Grade | TEST WAFER / DUMMY WAFER | |||||
Type | P/N | |||||
Dopant | P / Boron , N / Phosphorous / Antimony / Arsenic | |||||
Orientation | 100/110/111 | |||||
Surface | One Side Polished, Double Side Polished, | |||||
Back side | Etched / Bare | |||||
Edge Profile | Rounded Or As Required |
SILICON Bare Wafer (notch / Flat) | ||||||
Service | TYPE | Thickness | Delivery | |||
Thermal Oxidation (4” 〜12”) |
Dry/Wet | 300 〜 20,000 | 10 Days | |||
Nitride | Normal Low stress | 1,500 〜 3,000 | 10 Days | |||
Sputtering (4”~12”) |
Al/Si, Cu/Ti, W/Ti | Customized | 10 Days | |||
Back-End (Si) | Polishing | Bare / Oxidation | 10 Days | |||
Grinding Lapping |
200um less than | 10 Days | ||||
400um less than | 10 Days | |||||
400um over | 10 Days | |||||
Grinding Lapping polishing |
200um less than | 10 Days | ||||
400um less than | 10 Days | |||||
400um over | 10 Days | |||||
Dicing | Pattern | Customized | 10 Days | |||
Cleaning | Chemical | BOE/SC1 | 10 Days |